15.5: Data Tables
- Page ID
- 26084
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| Transistor | \(I_B\) Theory | \(I_B\) Exp | %D \(I_B\) | \(I_C\) Theory | \(I_C\) Exp | %D \(I_C\) | \(I_E\) Theory | \(I_E\) Exp | %D \(I_E\) |
|---|---|---|---|---|---|---|---|---|---|
| 1 | |||||||||
| 2 | |||||||||
| 3 |
Table \(\PageIndex{1}\)
| Transistor | \(V_{BE \; Thry}\) | \(V_{BE \; Exp}\) | %D \(V_{BE}\) | \(V_{CE \; Thry}\) | \(V_{CE \; Exp}\) | %D \(V_{CE}\) | \(\beta _{Theory}\) | \(\beta _{ Exp}\) | %D \(\beta \) |
|---|---|---|---|---|---|---|---|---|---|
| 1 | |||||||||
| 2 | |||||||||
| 3 |
Table \(\PageIndex{1}\)
| Calculated \(R_B\) | Actual \(R_B\) Used | \(I_B\) Measured | % Deviation \(I_B\) |
|---|---|---|---|
Table \(\PageIndex{1}\)
| \(I_{B \; sim}\) | \(I_{C \; sim}\) | \(I_{E \; sim}\) | \(V_{CE \; sim}\) |
|---|---|---|---|
Table \(\PageIndex{1}\)