Skip to main content
Engineering LibreTexts

12.5: E-MOSFET Data Sheet Interpretation

  • Page ID
    25330
  • \( \newcommand{\vecs}[1]{\overset { \scriptstyle \rightharpoonup} {\mathbf{#1}} } \) \( \newcommand{\vecd}[1]{\overset{-\!-\!\rightharpoonup}{\vphantom{a}\smash {#1}}} \)\(\newcommand{\id}{\mathrm{id}}\) \( \newcommand{\Span}{\mathrm{span}}\) \( \newcommand{\kernel}{\mathrm{null}\,}\) \( \newcommand{\range}{\mathrm{range}\,}\) \( \newcommand{\RealPart}{\mathrm{Re}}\) \( \newcommand{\ImaginaryPart}{\mathrm{Im}}\) \( \newcommand{\Argument}{\mathrm{Arg}}\) \( \newcommand{\norm}[1]{\| #1 \|}\) \( \newcommand{\inner}[2]{\langle #1, #2 \rangle}\) \( \newcommand{\Span}{\mathrm{span}}\) \(\newcommand{\id}{\mathrm{id}}\) \( \newcommand{\Span}{\mathrm{span}}\) \( \newcommand{\kernel}{\mathrm{null}\,}\) \( \newcommand{\range}{\mathrm{range}\,}\) \( \newcommand{\RealPart}{\mathrm{Re}}\) \( \newcommand{\ImaginaryPart}{\mathrm{Im}}\) \( \newcommand{\Argument}{\mathrm{Arg}}\) \( \newcommand{\norm}[1]{\| #1 \|}\) \( \newcommand{\inner}[2]{\langle #1, #2 \rangle}\) \( \newcommand{\Span}{\mathrm{span}}\)\(\newcommand{\AA}{\unicode[.8,0]{x212B}}\)

    A data sheet for an E-MOSFET, the FDMS86180, is shown in Figure \(\PageIndex{1}\). This is an N-channel, high power device using trench construction.

    clipboard_e8f0405e84938d8b74ed6f65834e3868a.png

    Figure \(\PageIndex{1a}\) : FDMS86180 data sheet. Used with permission from SCILLC dba ON Semiconductor.

    One of the first things that might jump out is the “100% RoHS Compliant” green leaf logo in the upper center, meaning that the device meets the Restriction of Hazardous Substances directive. The device comes in the flat, multi-pin Power 56 package and features an \(r_{DS(on)}\) of just a few milliohms. Continuous current capability at room temperature is 151 amps with a pulsed current maximum of 775 amps. In Figure \(\PageIndex{1b}\) we find a breakdown voltage of 100 volts and an \(I_{DSS}\) of only 1 \(\mu\)A. Recall that this is a normally off device, and thus \(I_{DSS}\) represents a leakage current. Continuing, \(V_{GS(th)}\) varies between 2.0 and 4.0 volts, with 3.2 volts being typical. The forward transconductance, \(g_m\) (here referred to as \(g_{FS}\)) is 144 siemens at a drain current of 67 amps. This is orders of magnitude greater than what we might see with small signal devices. Turn-on and turn-off times are measured in the tens of nanoseconds, verifying the high speed switching ability of the device.

    clipboard_ebfcbd484f5255eaeddc08671dc25c8a4.png

    Figure \(\PageIndex{1b}\) : FDMS86180 data sheet (cont).

    A series of performance graphs are found in Figure \(\PageIndex{1c}\). In the upper left is a section of drain curves showing the ohmic region through \(V_{DS} = 5\) V. The plot directly below this shows the increase in \(r_{DS(on)}\) as temperature rises. There is about a three-fold variation across the temperature range. At lower left is the characteristic curve variation. Note that the curves are less steep as temperature increases, showing a decrease in \(g_m\) and thus, verifying a negative temperature coefficient of transconductance.

    clipboard_e0af8da95c6b44489136bca7014c389d2.png

    Figure \(\PageIndex{1c}\) : FDMS86180 data sheet (cont).


    This page titled 12.5: E-MOSFET Data Sheet Interpretation is shared under a CC BY-NC-SA 4.0 license and was authored, remixed, and/or curated by James M. Fiore via source content that was edited to the style and standards of the LibreTexts platform; a detailed edit history is available upon request.

    • Was this article helpful?