1.4: References

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[1] M. Steer, Microwave and RF Design, Radio Systems, 3rd ed. North Carolina State University, 2019.

[2] ——, Microwave and RF Design, Transmission Lines, 3rd ed. North Carolina State University, 2019.

[3] ——, Microwave and RF Design, Networks, 3rd ed. North Carolina State University, 2019.

[4] ——, Microwave and RF Design, Modules, 3rd ed. North Carolina State University, 2019.

[5] B. B. Streetman and S. Banerjee, Solid State Electronic Devices, 6th ed. Prentice Hall, 2006.

[6] S. Sze and K. Ng, Physics of Semiconductor Devices, 3rd ed. John Wiley & Sons, 2007.

[7] H. Gummel and H. Poon, “An integral charge control model of bipolar transistors,” Bell Syst. Tech. J., vol. 49, pp. 827–852, may– jun 1970.

[8] IEEE Standard 315-1975, Graphic Symbols for Electrical and Electronics Diagrams (Including Reference Designation Letters), Adopted Sept. 1975, Reaffirmed Dec. 1993. Approved by American National Standards Institute, Jan. 1989. Approved adopted for mandatory use, Department of Defense, United States of America, Oct. 1975. Approved by Canadian Standards Institute, Oct. 1975.

[9] R. Baker, CMOS Circuit Design, Layout, and Simulation, 2nd ed. Wiley-Interscience, IEEE Press, 2008.

[10] D. Schroder, Semiconductor Material and Device Characterization. IEEE Press and Wiley, 2006.

[11] M. Johnson, D. Barlage, and D. Braddock, “Prospect for III-nitride heterojunction MOSFET structures and devices,” in Materials Research Society Proc., 2004.

[12] C. Roff, P. McGovern, J. Benedikt, P. Tasker, M. Johnson, D. Barlage, W. Sutton, and D. Braddock, “Pulsed-iv and RF waveform measurements of unique high-k dielectric GaN MOSFETs,” in IEEE Int Conf. on Microwaves, Communications, Antennas and Electronic Systems, 2008 (COMCAS 2008), May 2008, pp. 1–4.

[13] Y. Bito, N. Iwata, and M. Tomita, “64% efficiency enhancement-mode power heterojunction FET for 3.5 V Li-ion battery operated personal digital cellular phones,” in 1998 IEEE MTT-S Int. Microwave Symp. Dig., Jun. 1998, pp. 439–442.

[14] A. Materka and T. Kacprzak, “Computer calculation of large-signal GaAs FET amplifier characteristics,” IEEE Trans. on Microwave Theory and Techniques, vol. 33, no. 2, pp. 129– 135, Feb. 1985.

[15] C. Enz and E. Vittoz, Charge-Based MOS Transistor Modeling: the EKV Model for Low-Power and RF IC Design. Wiley, 2006.

[16] W. Grabinski, B. Nauwelaers, and D. Schreurs, Eds., Transistor Level Modeling for Analog/RF IC Design. Springer, 2006.

[17] D. Foty, MOSFET Modeling With SPICE: Principles and Practice. Prentice-Hall, 1997.

[18] W. Liu, MOSFET Models for Spice Simulation, Including BSIM3v3 and BSIM4. John Wiley & Sons, 2001.

[19] P. Yang, B. Epler, and P. Chatterjee, “An investigation of the charge conservation problem for MOSFET circuit simulation,” IEEE J. of Solid-State Circuits, vol. 18, no. 1, pp. 128– 138, Feb. 1983.

[20] I. Angelov, H. Zirath, and N. Rosman, “A new empirical nonlinear model for HEMT and MESFET devices,” IEEE Trans. on Microwave Theory and Techniques, vol. 40, no. 12, pp. 2258–2266, Dec. 1992.

[21] R. Pengelly, Microwave Field-Effect Transistors: Theory, Design, and Applications. Noble, 1994.

[22] F. Schwierz and J. Liou, Modern Microwave Transistors: Theory, Design, and Performance. Wiley, 2003.

[23] M. Rudolph, Introduction to Modeling HBTs. Artech House, 2006.

[24] J. Yuan, SiGe, GaAs, and InP Heterojunction Biopolar Transistors. Wiley, 1999.