12.5: E-MOSFET Data Sheet Interpretation
- Page ID
- 25330
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\(\newcommand{\avec}{\mathbf a}\) \(\newcommand{\bvec}{\mathbf b}\) \(\newcommand{\cvec}{\mathbf c}\) \(\newcommand{\dvec}{\mathbf d}\) \(\newcommand{\dtil}{\widetilde{\mathbf d}}\) \(\newcommand{\evec}{\mathbf e}\) \(\newcommand{\fvec}{\mathbf f}\) \(\newcommand{\nvec}{\mathbf n}\) \(\newcommand{\pvec}{\mathbf p}\) \(\newcommand{\qvec}{\mathbf q}\) \(\newcommand{\svec}{\mathbf s}\) \(\newcommand{\tvec}{\mathbf t}\) \(\newcommand{\uvec}{\mathbf u}\) \(\newcommand{\vvec}{\mathbf v}\) \(\newcommand{\wvec}{\mathbf w}\) \(\newcommand{\xvec}{\mathbf x}\) \(\newcommand{\yvec}{\mathbf y}\) \(\newcommand{\zvec}{\mathbf z}\) \(\newcommand{\rvec}{\mathbf r}\) \(\newcommand{\mvec}{\mathbf m}\) \(\newcommand{\zerovec}{\mathbf 0}\) \(\newcommand{\onevec}{\mathbf 1}\) \(\newcommand{\real}{\mathbb R}\) \(\newcommand{\twovec}[2]{\left[\begin{array}{r}#1 \\ #2 \end{array}\right]}\) \(\newcommand{\ctwovec}[2]{\left[\begin{array}{c}#1 \\ #2 \end{array}\right]}\) \(\newcommand{\threevec}[3]{\left[\begin{array}{r}#1 \\ #2 \\ #3 \end{array}\right]}\) \(\newcommand{\cthreevec}[3]{\left[\begin{array}{c}#1 \\ #2 \\ #3 \end{array}\right]}\) \(\newcommand{\fourvec}[4]{\left[\begin{array}{r}#1 \\ #2 \\ #3 \\ #4 \end{array}\right]}\) \(\newcommand{\cfourvec}[4]{\left[\begin{array}{c}#1 \\ #2 \\ #3 \\ #4 \end{array}\right]}\) \(\newcommand{\fivevec}[5]{\left[\begin{array}{r}#1 \\ #2 \\ #3 \\ #4 \\ #5 \\ \end{array}\right]}\) \(\newcommand{\cfivevec}[5]{\left[\begin{array}{c}#1 \\ #2 \\ #3 \\ #4 \\ #5 \\ \end{array}\right]}\) \(\newcommand{\mattwo}[4]{\left[\begin{array}{rr}#1 \amp #2 \\ #3 \amp #4 \\ \end{array}\right]}\) \(\newcommand{\laspan}[1]{\text{Span}\{#1\}}\) \(\newcommand{\bcal}{\cal B}\) \(\newcommand{\ccal}{\cal C}\) \(\newcommand{\scal}{\cal S}\) \(\newcommand{\wcal}{\cal W}\) \(\newcommand{\ecal}{\cal E}\) \(\newcommand{\coords}[2]{\left\{#1\right\}_{#2}}\) \(\newcommand{\gray}[1]{\color{gray}{#1}}\) \(\newcommand{\lgray}[1]{\color{lightgray}{#1}}\) \(\newcommand{\rank}{\operatorname{rank}}\) \(\newcommand{\row}{\text{Row}}\) \(\newcommand{\col}{\text{Col}}\) \(\renewcommand{\row}{\text{Row}}\) \(\newcommand{\nul}{\text{Nul}}\) \(\newcommand{\var}{\text{Var}}\) \(\newcommand{\corr}{\text{corr}}\) \(\newcommand{\len}[1]{\left|#1\right|}\) \(\newcommand{\bbar}{\overline{\bvec}}\) \(\newcommand{\bhat}{\widehat{\bvec}}\) \(\newcommand{\bperp}{\bvec^\perp}\) \(\newcommand{\xhat}{\widehat{\xvec}}\) \(\newcommand{\vhat}{\widehat{\vvec}}\) \(\newcommand{\uhat}{\widehat{\uvec}}\) \(\newcommand{\what}{\widehat{\wvec}}\) \(\newcommand{\Sighat}{\widehat{\Sigma}}\) \(\newcommand{\lt}{<}\) \(\newcommand{\gt}{>}\) \(\newcommand{\amp}{&}\) \(\definecolor{fillinmathshade}{gray}{0.9}\)A data sheet for an E-MOSFET, the FDMS86180, is shown in Figure \(\PageIndex{1}\). This is an N-channel, high power device using trench construction.
Figure \(\PageIndex{1a}\) : FDMS86180 data sheet. Used with permission from SCILLC dba ON Semiconductor.
One of the first things that might jump out is the “100% RoHS Compliant” green leaf logo in the upper center, meaning that the device meets the Restriction of Hazardous Substances directive. The device comes in the flat, multi-pin Power 56 package and features an \(r_{DS(on)}\) of just a few milliohms. Continuous current capability at room temperature is 151 amps with a pulsed current maximum of 775 amps. In Figure \(\PageIndex{1b}\) we find a breakdown voltage of 100 volts and an \(I_{DSS}\) of only 1 \(\mu\)A. Recall that this is a normally off device, and thus \(I_{DSS}\) represents a leakage current. Continuing, \(V_{GS(th)}\) varies between 2.0 and 4.0 volts, with 3.2 volts being typical. The forward transconductance, \(g_m\) (here referred to as \(g_{FS}\)) is 144 siemens at a drain current of 67 amps. This is orders of magnitude greater than what we might see with small signal devices. Turn-on and turn-off times are measured in the tens of nanoseconds, verifying the high speed switching ability of the device.
Figure \(\PageIndex{1b}\) : FDMS86180 data sheet (cont).
A series of performance graphs are found in Figure \(\PageIndex{1c}\). In the upper left is a section of drain curves showing the ohmic region through \(V_{DS} = 5\) V. The plot directly below this shows the increase in \(r_{DS(on)}\) as temperature rises. There is about a three-fold variation across the temperature range. At lower left is the characteristic curve variation. Note that the curves are less steep as temperature increases, showing a decrease in \(g_m\) and thus, verifying a negative temperature coefficient of transconductance.
Figure \(\PageIndex{1c}\) : FDMS86180 data sheet (cont).