8: Semiconductor Saturable Absorbers
- Page ID
- 44668
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\(\newcommand{\avec}{\mathbf a}\) \(\newcommand{\bvec}{\mathbf b}\) \(\newcommand{\cvec}{\mathbf c}\) \(\newcommand{\dvec}{\mathbf d}\) \(\newcommand{\dtil}{\widetilde{\mathbf d}}\) \(\newcommand{\evec}{\mathbf e}\) \(\newcommand{\fvec}{\mathbf f}\) \(\newcommand{\nvec}{\mathbf n}\) \(\newcommand{\pvec}{\mathbf p}\) \(\newcommand{\qvec}{\mathbf q}\) \(\newcommand{\svec}{\mathbf s}\) \(\newcommand{\tvec}{\mathbf t}\) \(\newcommand{\uvec}{\mathbf u}\) \(\newcommand{\vvec}{\mathbf v}\) \(\newcommand{\wvec}{\mathbf w}\) \(\newcommand{\xvec}{\mathbf x}\) \(\newcommand{\yvec}{\mathbf y}\) \(\newcommand{\zvec}{\mathbf z}\) \(\newcommand{\rvec}{\mathbf r}\) \(\newcommand{\mvec}{\mathbf m}\) \(\newcommand{\zerovec}{\mathbf 0}\) \(\newcommand{\onevec}{\mathbf 1}\) \(\newcommand{\real}{\mathbb R}\) \(\newcommand{\twovec}[2]{\left[\begin{array}{r}#1 \\ #2 \end{array}\right]}\) \(\newcommand{\ctwovec}[2]{\left[\begin{array}{c}#1 \\ #2 \end{array}\right]}\) \(\newcommand{\threevec}[3]{\left[\begin{array}{r}#1 \\ #2 \\ #3 \end{array}\right]}\) \(\newcommand{\cthreevec}[3]{\left[\begin{array}{c}#1 \\ #2 \\ #3 \end{array}\right]}\) \(\newcommand{\fourvec}[4]{\left[\begin{array}{r}#1 \\ #2 \\ #3 \\ #4 \end{array}\right]}\) \(\newcommand{\cfourvec}[4]{\left[\begin{array}{c}#1 \\ #2 \\ #3 \\ #4 \end{array}\right]}\) \(\newcommand{\fivevec}[5]{\left[\begin{array}{r}#1 \\ #2 \\ #3 \\ #4 \\ #5 \\ \end{array}\right]}\) \(\newcommand{\cfivevec}[5]{\left[\begin{array}{c}#1 \\ #2 \\ #3 \\ #4 \\ #5 \\ \end{array}\right]}\) \(\newcommand{\mattwo}[4]{\left[\begin{array}{rr}#1 \amp #2 \\ #3 \amp #4 \\ \end{array}\right]}\) \(\newcommand{\laspan}[1]{\text{Span}\{#1\}}\) \(\newcommand{\bcal}{\cal B}\) \(\newcommand{\ccal}{\cal C}\) \(\newcommand{\scal}{\cal S}\) \(\newcommand{\wcal}{\cal W}\) \(\newcommand{\ecal}{\cal E}\) \(\newcommand{\coords}[2]{\left\{#1\right\}_{#2}}\) \(\newcommand{\gray}[1]{\color{gray}{#1}}\) \(\newcommand{\lgray}[1]{\color{lightgray}{#1}}\) \(\newcommand{\rank}{\operatorname{rank}}\) \(\newcommand{\row}{\text{Row}}\) \(\newcommand{\col}{\text{Col}}\) \(\renewcommand{\row}{\text{Row}}\) \(\newcommand{\nul}{\text{Nul}}\) \(\newcommand{\var}{\text{Var}}\) \(\newcommand{\corr}{\text{corr}}\) \(\newcommand{\len}[1]{\left|#1\right|}\) \(\newcommand{\bbar}{\overline{\bvec}}\) \(\newcommand{\bhat}{\widehat{\bvec}}\) \(\newcommand{\bperp}{\bvec^\perp}\) \(\newcommand{\xhat}{\widehat{\xvec}}\) \(\newcommand{\vhat}{\widehat{\vvec}}\) \(\newcommand{\uhat}{\widehat{\uvec}}\) \(\newcommand{\what}{\widehat{\wvec}}\) \(\newcommand{\Sighat}{\widehat{\Sigma}}\) \(\newcommand{\lt}{<}\) \(\newcommand{\gt}{>}\) \(\newcommand{\amp}{&}\) \(\definecolor{fillinmathshade}{gray}{0.9}\)So far we only considered artificial saturable absorbers, but there is of course the possibility to use real absorbers for modelocking. A prominent candidate for a saturable absorber is semiconductor material, which was pioneered by Islam, Knox and Keller [1][2][3] The great advantage of using semiconductor materials is that the wavelength range over which these absorbers operate can be chosen by material composition and bandstructure engineering, if semiconductor heterostructures are used (see Figure 8.1). Even though, the basic physics of carrier dynamics in these structures is to a large extent well understood [4], the actual development of semiconductor saturable absorbers for mode locking is still very much ongoing.
Image removed due to copyright restrictions. Please see: Keller, U., Ultrafast Laser Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hönggerberg—HPT, CH-8093 Zurich, Switzerland. Used with permission. Figure 8.1: Energy Gap, corresponding wavelength and lattice constant for various compound semiconductors. The dashed lines indicate indirect transitions.
A typical semiconductor saturable absorber structure is shown in Figure 8.2. A semiconductor heterostruture (here AlAs/GaAs) is grown on a GaAs- Wafer (20-40 pairs). The layer thicknesses are chosen to be quarter wave at the center wavelength at which the laser operates. These structures act as quarter-wave Bragg mirror. On top of the Bragg mirror, a half-wave thick layer of the low index material (here AlAs) is grown, which has a field-maximum in its center. At the field maximum, either a bulk layer of a compound semiconductor or a single-or multiple Quantum Well (MQW) structure is embedded, which acts as a saturable absorber for the operating wavelength of the laser. The absorber mirror serves as one of the endmirrors in the laser (see Figure 8.3).
- 8.1: Carrier Dynamics and Saturation Properties
- This page examines ultrafast carrier dynamics in bulk semiconductors, focusing on coherent dynamics, thermalization, and carrier trapping/recombination time scales. It discusses how coherent destruction and thermalization occur through interactions, resulting in cooling via LO-phonon emission.
- 8.2: High Fluence Effects
- This page explores the role of semiconductor saturable absorbers (SSAs) in laser applications, focusing on their operation at high excitation levels to prevent Q-switched mode-locking. It details the dynamics of absorption bleaching, two-photon absorption (TPA), and free carrier absorption (FCA) under varying pump power, presenting experimental results that demonstrate how high fluence effects influence saturation characteristics, ultimately affecting pulse energy and mode locking outcomes.
- 8.3: Break-up into Multiple Pulses
- This page examines the stability of mode-locked lasers, particularly the influence of fast and slow saturable absorbers on pulse behavior and break-up into multiple pulses. It addresses how pulse energy, saturation levels, and soliton dynamics affect pulse width and stability, with emphasis on the critical role of negative group delay dispersion and positive self-phase modulation.
- 8.4: Summary
- This page outlines the benefits of real absorbers for direct amplitude modulation without needing extra cavities for phase-to-amplitude conversion. It focuses on the use of semiconductor saturable absorbers in compact resonator designs, especially for GHz range high-repetition-rate lasers, emphasizing their low saturation energies and compactness in overcoming technological hurdles. It also references previous research on semiconductor behavior and laser technology.