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Engineering LibreTexts

3: FETs

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  • 3.1: Introduction to MOSFETs
    Introduction to MOSFET, a device called the Metal-Oxide-Semiconductor Field Effect Transistor.
  • 3.2: Basic MOS Structure
    Discussing the basic MOS structure. Includes discussion of oxide capacitance, accumulation and inversion layers, and threshold and threshold voltage.
  • 3.3: Threshold Voltage
    The process of finding out the threshold voltage.
  • 3.4: MOS Transistor
    Introduction to the MOS Transistor, especially its structure (source, channel, and gate) and some attributes.
  • 3.5: MOS Regimes
    Introducing the Sah equation, and discussing some properties of this equation.
  • 3.6: Plotting MOS I-V
    Plotting MOS I vs V relationships, and sketching their behavior.
  • 3.7: Models
    Introducing the MOSEFT model, and discussing its advantages over the bipolar transistor.
  • 3.8: Inverters and Logic
    Introducing the inverter circuit, and building circuits which perform the NOR and NAND function based on this inverter circuit.
  • 3.9: Transistor Loads for Inverters
    Discussing some other kinds of MOSFETs, and transistor loads for inverters.
  • 3.10: CMOS Logic
    Introducing the complementary MOS, including how to make a p-channel transistor and how this works.
  • 3.11: JFET
    How JFETs (junction field effect transistors) work.
  • 3.12: Electrostatic Discharge and Latch-Up
    As you are probably aware, you have to be very careful when handling MOS circuits to be sure that you are properly grounded, and that you do not transfer any static electricity to the chip. The standard human-body model assumes a static charge transfer of about 0.1 micro-Coulombs 10^−7C upon static electricity discharge between a human and a chip.


This page titled 3: FETs is shared under a CC BY 1.0 license and was authored, remixed, and/or curated by Bill Wilson via source content that was edited to the style and standards of the LibreTexts platform.

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